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2xHMT125S6AFR8C-G7 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
M393A2G40EB2-CTD Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
HYMP564S64BP6-C4 Capacity 512MB (1x 512MB) Brand Hynix Speed DDR2-533 - 533MT/s - PC2-4200 Voltage 1
HMT351U6BFR8C-H9N0 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
This 1GB (1x 1GB) DDR3 1066 MT/s Single rank
Samsung 4GB (1x 4GB) CL9 DDR3L-1333 PC3L-10600 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-dimm-4gb-1x-dr 2xHMT125S6AFR8C-G7 Capacity 4GB (2x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1333 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3L compatible systems and operates at 1333 MT s with an overall transfer rate of PC3L 10600. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL9, and
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